QT2 transistor characteristic diagram instrumentDetailed product description：

QT2 transistor characteristic diagram instrument, with excellent performance, can meet various needs of different working environments. It can measure low-frequency DC parameters of diodes and transistors, with a maximum collector current exceeding 50A, and can meet the testing of devices below 500VA; This machine is equipped with a high-voltage measuring device, which can perform breakdown voltage and reverse leakage computer tests on diodes and transistors below 5KV. The highest sensitivity of its testing current can reach 0.5 μ/div;

Technical parameters of QT2 transistor characteristic diagram instrument:
Collector scan signal: transistor
Output voltage range and current capacity: 0-10V 50A (pulse step), 20A (average); 0-50V 10A (average); 0-100V 5A (average); 0-500V 0.5A (average)
Diode: 0-5KV 5mA (maximum)
Base step signal:
Step current: 1 μ A/step~200A/step, divided into 17 levels
Step voltage: 0.05V to 1V/step, divided into 5 levels
Ladder waveform: normal (100%), pulse (10-40%)
Y-axis deflection coefficient:
Collector current: 1 μ A/div~5A/div, divided into 21 levels
Diode current: 1 μ A/div~500A/div, divided into 9 levels
Magnification: × 0.5;
X-axis deflection coefficient:
Collector voltage: 10mV/div~50mV/div, divided into 12 levels;
Diode current: 100V/div~500V/div, divided into 3 levels;
General performance:
Effective display surface: 10 × 10div (1div=0.8cm);
Power supply: AC220V/50Hz;
Apparent power: about 80VA, about 300VA (maximum power);
Dimensions: 300B × 408H × 520Dmm;
Weight: 30kg;