QT2A type semiconductor transistor characteristic diagram instrumentDetailed product description：

The QT-2A semiconductor transistor characteristic diagram instrument can measure the low-frequency DC parameters of semiconductor diodes and transistors as needed, with a maximum collector current of 50A,
It basically meets the testing requirements for semiconductor tubes with power below 500W.
This instrument also comes with a high-voltage testing device, which can perform breakdown voltage and reverse leakage current tests on semiconductor tubes below 5000V,
The maximum sensitivity of its testing current reaches 0.5uA/degree.
The base step signal provided by this instrument also has a pulse step output, which can expand the measurement range and measure the secondary breakdown characteristics.
QT2A semiconductor transistor characteristic diagram instrument with step bias voltage (△ VB), continuously adjustable from -6V to+6V. Specially suitable for high-power VMOS tube testing.

1. Collector current deflection coefficient
a) Collector current range (Ic): 1 μ A/degree to 5A/degree. Divide into 21 levels based on 1, 2, and 5, with an error of no more than 3% for each level.
b) Diode current range (ID): 1 μ A/degree to 500 μ A/degree. 1. 2. There are 9 levels in the 5-point system, with an error of no more than 3% for each level.
c) The collector current and diode current rate are multiplied by 0.5, with an error not exceeding 10%.
d) The base current or base source voltage is 0.1V/degree, with an error of no more than 3%.
2. Collector voltage deflection coefficient
a) Collector voltage range (Uc): 10mV/degree to 50V/degree. Divide into 21 levels based on 1, 2, and 5, with an error of no more than 3% for each level.
b) Diode voltage range (UD): 100V/degree to 500V/degree. Divide into 3 levels based on 1, 2, and 5, with an error of no more than 10% for each level.
c) Base voltage range (UBE): 10mV/degree to 1V/degree, divided into 7 levels based on 1, 2, and 5, with an error of no more than 3% for each level.
d) Base current or base source voltage: 0.05V/degree, with an error not exceeding 3%.
3. Base step signal
a) Step current range (IB): 10uA/degree to 200mA/degree. Divided into 17 levels based on 1, 2, and 5, each level has an error of no more than 5%.
b) Step voltage range (UB): 50mV/degree to 1V/degree. Divide into 5 levels based on 1, 2, and 5, with an error of no more than 5% for each level.
c) Series resistance: 0 Ω, 10K Ω, 100K Ω, with an error of no more than 10% for each level.
d) Ladder waveform: divided into normal (100%) and pulse two levels. The pulse step duty cycle adjustment range is 10-40%.
e) Each cluster level: 0-10 levels, continuously adjustable.
f) Step bias voltage (△ VB): -6V to+6V, continuously adjustable.
g) Ladder function: divided into three levels: repeated, closed, and single.
h) Ladder input: divided into three levels: normal, zero current, and zero voltage.
i) Ladder polarity: divided into positive and negative levels.
4. Collector scan voltage
a) Output voltage and voltage range: 0-10V, continuously adjustable positive or negative
0-50V continuously adjustable positive or negative
0-50V continuously adjustable positive or negative
0-100V continuously adjustable positive or negative
0-500V continuously adjustable positive or negative
b) Output current capacity: 0-10V 50A (in pulse step working state)
0-10V 20A (average)
0-50V 10A (average)
0-100V 5A (average)
0-500V 0.5A (average)
c) Power consumption limiting resistor: 0-500K Ω divided into 20 levels based on 1, 2, and 5, with an error of no more than 10% for each level.
d) Rectification method: full wave
e) Output polarity:+, -
f) Collector capacitive current; After balancing, it should not exceed 2uA (10V gear)
g) Collector leakage current; After balancing, it should not exceed 2uA (10V gear)
5. Diode testing device
a) Output voltage: 0-5000V, continuously adjustable in the forward direction
b) Output current capacity: maximum 5mA
c) Rectification method: half wave
6. QT2A Semiconductor Tube Characteristics Diagram Instrument Other
a) Adapter
High voltage test seat, transistor test seat, power transistor test seat
b) The weight is about 30kg.
c) The external dimensions are 300mm × 408mm × 520mm (W × H × D).
d) Power consumption: Approximately 80VA in non test state;
At maximum power: approximately 300VA.
e) Input voltage: 220V ± 10%;
f) Frequency: 50HZ ± 5%.
g) Oscilloscope: 15SJ118-DC effective working surface 8 × 10cm.
h) Electromagnetic compatibility
Conducted interference shall comply with the requirements of Chapter 1 of GB/T 6833.9.
Radiation interference shall comply with the requirements of Chapter 1 of GB/T 6833.10.
The environment should comply with the requirements of Grade II instruments in GB/T 6587.1, and transportation tests should be conducted at Grade 2.